Optical Properties of Indium Chalcogenide In2Se3xTe3(1-X) Vacuum Evaporated Polycrystalline Thin Films

Rezumat

The energy band gaps of Indium chalcogenide In₂Se_3XTe_3(1-X) thin films (X = 0 to 1) have been studied at room temperature. Ternary polycrystalline of desired composition were prepared by drop quenching technique. Thus, prepared material was then used to deposited thin films on glass substrate employing thermal evaporation technique. The Varian Cary 5000 Spectrophotometer is used to measure the absorption spectra of these polycrystalline materials in the wavelength range of 600 to 2000 nm. The optical energy band gap is obtained through the examination of the absorption spectra. The range of values for this is determined to be between 0.89 and 2.18 electron volts (eV). The optical band gap is maximum in case of In₂Se₃ at X= 1. The optical band gap increases as we increase the concentration of selenium in InSeTe system. Polycrystalline nature of the films was confirmed by their XRD patterns.